esd protection diode emzc6.8n ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) esd protection ? features 1)ultra small mold type. (emd3) 2)low capacitance ? construction silicon epitaxial ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit pmw tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit conditions zener voltage v z 6.65 - 6.93 v i z =5ma reverse current i r - - 0.50 av r =3.5v c t -3- pf f=1mhz,v r =0v (*1) total of 2 elements parameter capacitance between terminals junction temperature 150 storage temperature ? 55 to ? 150 parameter limits power dissipation (*1 150 emd3 1.0 0.7 0.5 0.5 0.7 0.7 0.6 0.6 1.3 rohm : emd3 jeita : sc-75a jedec : sot-416 dot (year week factory) (3) 1.60.2 1.60.2 1.00.1 0.80.1 0.5 0.5 (2) (1) 0.150.05 0.70.1 0.550.1 0.1min 0 0.1 0.20.1 -0.05 0.30.1 0.05 4.00.1 2.00.05 1.550.1 0 3.50.05 1.750.1 8.00.2 0.50.1 1.80.2 0.30.1 1.80.1 5.50.2 0.90.2 00.1 1.5 ? 0.1 ? 0 1/2 2011.04 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
emzc6.8n 1 10 0 0.5 1 1.5 2 2.5 3 3.5 zener voltagevz(v) vz-iz characteristics zener current:iz(ma) reverse current:ir(na) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vz dispersion map zener voltage:vz(v) reverse current:ir(na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map zener current:iz(ma) zz-iz characteristics dynamic impedance:zz() f=1mh 0 1 2 3 4 5 6 7 8 9 10 ave:0.334na ta=25 vr=3.5v n=30pcs 10 100 1000 10000 00.511.522.533.5 ta=125 ta=75 ta=25 ta=-25 1 10 100 0.1 1 10 0 1 2 3 4 5 6 7 8 9 10 ave:2.87pf ta=25 f=1mhz vr=0v n=10pcs 0.01 0.1 1 10 5 5.5 6 6.5 7 7.5 8 ta=75 ta=-25 ta=125 ta=25 6.5 6.6 6.7 6.8 6.9 7 ave:6.752v ta=25 iz=5ma n=30pcs 2/2 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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